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Applications of Silicon-Germanium Heterostructure Devices
Applications of Silicon-Germanium Heterostructure Devices
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€341.00
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A01=C.K Maiti
A01=G.A Armstrong
Author_C.K Maiti
Author_G.A Armstrong
band
Base Collector Capacitance
Base Collector Junction
Base Doping
Base Transit Time
bipolar
Bipolar Transistors
BJT
Category=PHFC
Category=PHK
CMOS Technology
Collector Doping
compact transistor models
concentration
conduction
content
cryogenic electronics
Current Gain
Emitter Base Junction
eq_bestseller
eq_isMigrated=1
eq_isMigrated=2
eq_nobargain
eq_non-fiction
eq_science
Ge Content
hbts
heterojunction field effect
high frequency SiGe device design
Interface State Density
layer
MOS Device
MOS Transistor
MSM Photodetector
optoelectronic integration
RF circuit simulation
SBH
Schottky Diode
semiconductor device modeling
sige
SiGe Channel
SiGe HBT
SiGe HBT Technology
SIGE HBTS
SiGe Quantum
SiGe Technology
Spice Parameter
Strained Si Channel
transistor
valence
Product details
- ISBN 9780750307239
- Weight: 839g
- Dimensions: 156 x 234mm
- Publication Date: 20 Jul 2001
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Hardback
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
Applications of Silicon-Germanium Heterostructure Devices
€341.00
