advanced silicon device applications
Atmospheric Neutrino
Baryon Asymmetry
bipolar transistor modeling
boson
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Category=PNFS
CDM
CP Violation
Dark Matter
Double Beta Decay
electronic materials engineering
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gauge
Gauge Bosons
Gut Scale
Heterotic String
Higgs Boson
Higgs Field
Higgs Mass
lepton
Lepton Number
Lepton Number Violating
Lightest Higgs Boson
Majorana Neutrinos
masses
Massive Neutrinos
model
MOSFET design methods
MSSM.
neutrino
Neutrino Oscillation
Neutrinoless Double Beta Decay
Nuclear Matrix Elements
Observe CP Violation
oscillation
physics
semiconductor device simulation
SiGe heterostructures
Solar Neutrino
standard
strained silicon technology
String Theory
violation
Yukawa Coupling
Product details
- ISBN 9780750307314
- Weight: 2063g
- Dimensions: 156 x 234mm
- Publication Date: 01 Jan 2000
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Hardback
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Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
