Breakdown Phenomena In Semiconductors And Semiconductor Devices
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A01=Juha Kostamovaara
A01=Michael E Levinshtein
A01=Sergey Vainshtein
Author_Juha Kostamovaara
Author_Michael E Levinshtein
Author_Sergey Vainshtein
Avalanche
Breakdown
Category=PHK
Devices
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eq_isMigrated=1
eq_isMigrated=2
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eq_non-fiction
eq_science
Impact Ionization
Phenomena
Semiconductor
Superfast Switching
Product details
- ISBN 9789812563958
- Publication Date: 08 Sep 2005
- Publisher: World Scientific Publishing Co Pte Ltd
- Publication City/Country: SG
- Product Form: Hardback
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Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
