A01=Sokrates T. Pantelides
advanced solid state physics
Author_Sokrates T. Pantelides
Category=PHFC
Category=PHK
Chromium
Crystalline Semiconductors
deep centre characterisation techniques
deep level traps
electronic band structure
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Gallium Arsenide
hydrogen defects
Iron Impurity Centers
Lattice Vacancy
Optoelectronic Properties
point defect physics
recombination mechanisms
Semiconductors
Silicon
Product details
- ISBN 9782881245626
- Weight: 1434g
- Dimensions: 152 x 229mm
- Publication Date: 30 Nov 1992
- Publisher: Gordon & Breach Science Publishers SA
- Publication City/Country: NL
- Product Form: Hardback
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Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors.
Sokrates T. Pantelides (Author)
