Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
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A01=G.B. Stringfellow
A01=Gerald B. Stringfellow
advanced materials characterization
Author_G.B. Stringfellow
Author_Gerald B. Stringfellow
Bipolar Transistor
Carrier Concentration
Category=PHJ
Critical Layer Thickness
Double Crystal X-ray Diffraction
Double Heterostructures
electronic transport phenomena
Epitaxial metallic films
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Field Effect Transistors
GaAs HBTs
GaAs Heterostructures
GaAs MESFETs
GaAs Substrate
Gallium Arsenide
HBT
HEMTs
High-speed three-terminal devices
III-V compounds
III-V semiconductor device engineering
InP Substrate
Misfit Dislocations
MOCVD
Modulation Doped Structure
molecular beam epitaxy
MQW
OMVPE
Photoluminescence Spectrum
quantum electronics research
QW
RHEED
SEM
semiconductor device physics
Shubnikov De Haas Oscillation
Sim
solid state physics applications
Threshold Current Density
Product details
- ISBN 9780367402891
- Weight: 453g
- Dimensions: 156 x 234mm
- Publication Date: 02 Oct 2019
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Paperback
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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Gerald B. Stringfellow
