Heteroepitaxy of Semiconductors

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A01=Johanna Raphael
A01=John E. Ayers
A01=Paul Rago
A01=Tedi Kujofsa
advanced optoelectronic devices
Author_Johanna Raphael
Author_John E. Ayers
Author_Paul Rago
Author_Tedi Kujofsa
Blende Crystals
Blende Semiconductor
Burgers Vector
Category=PHK
Compliant Substrate
Cos Cos Cos Cos Cos
Critical Layer Thickness
crystal growth mechanisms
defect analysis methods
Diffraction Profiles
Dislocation Density
dislocation dynamics
Double Crystal Diffractometer
Epitaxial Layer
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EQEs
Grading Coefficient
heteroepitaxial growth methods
Heteroepitaxial Layer
III-V compound semiconductors
Laser Diodes
Lattice Mismatch Strain
Lattice Relaxation
lattice strain relaxation
Light-Emitting Diodes
metamorphic buffer layer design
Metamorphic Buffers
Metamorphic Devices
Misfit Dislocation Density
Misfit Dislocations
mismatched heteroepitaxy
Nanotechnology
Photovoltaics
Quantum Devices
Reciprocal Lattice Point
Rocking Curve
Rocking Curve Width
Semiconductor Fabrication
semiconductor materials science
semiconductors
Slip Systems
Stacking Fault
strain engineering techniques
Strained-Layer Epitaxy
Threading Dislocation
Threading Dislocation Densities
X-Ray Characterization
Zinc Blende

Product details

  • ISBN 9781482254358
  • Weight: 1723g
  • Dimensions: 178 x 254mm
  • Publication Date: 18 Oct 2016
  • Publisher: Taylor & Francis Inc
  • Publication City/Country: US
  • Product Form: Hardback
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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

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