Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit
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1Gbit DRAM
?m CMOS Technology
advanced lithography methods
Category=UKS
Category=UY
Convex Corner
device technology
DRAM process scaling challenges
dynamic random access memory
ECR Plasma
electrical characterisation
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Etch Rate
Flatband Voltage
impurity diffusion techniques
Interstitial Silicon
Japanese high-technology products
LSI process technology
Mbit Dram
MOS Capacitor
MOS Device
MOS Transistor
Novolak Resin
Plasma CVD
Point Defect
Power Consumption
process-device simulation technology
Self-interstitial Atom
semiconductor fabrication
Short Channel Effects
silicon device engineering
Soft Error Rate
SOI Film
SOI Layer
SOI MOSFET
Step Coverage
Thermal CVD
thin film processing
Thin SOI Film
Trench Capacitor
Μm CMOS Technology
Product details
- ISBN 9789056990985
- Weight: 540g
- Dimensions: 138 x 216mm
- Publication Date: 26 Nov 1998
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Paperback
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This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies—the longstanding technology driver of Si ULSI—as they advance from the 1 Kbit to the Gbit DRAM era.
