Microscopy of Semiconducting Materials
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advanced microscopy for device fabrication
Ai Map
AlN Buffer Layer
beam
Branch Defects
Category=PDND
Category=PHFC
Category=PHK
CoSi2 Surface
density
dislocation
dislocations
Displacement Vector
Effective Channel Length
EFTEM
electron probe analysis
Electron Spectroscopic Imaging
Energy Filtering Transmission Electron Microscopy
epitaxy
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Extrinsic Stacking Fault
fault
focused ion beam milling
GaN Film
GaN Layer
HEMTs
high
Hitachi SEM
Inversion Domain Boundaries
Inversion Domains
Lomer Dislocation
materials microanalysis
Misfit Dislocations
molecular
QD Layer
quantum nanostructures
RGB Image
scanning probe methods
semiconductor microscopy techniques
SRIM Package
stacking
Stacking Fault
Stair Rod Dislocation
threading
Threading Dislocation Density
Threading Dislocations
Product details
- ISBN 9780750306508
- Weight: 1428g
- Dimensions: 156 x 234mm
- Publication Date: 01 Jan 2000
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Hardback
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With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
