Nanoparticle Engineering for Chemical-Mechanical Planarization

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A01=Jea-Gun Park
A01=Ungyu Paik
Abrasive Particles
advanced memory technology
Age Group_Uncategorized
Age Group_Uncategorized
Author_Jea-Gun Park
Author_Ungyu Paik
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Category1=Kids
Category=YPCA21
Category=YQCR
Ceria Particles
chemical mechanical planarization techniques
CMP Process
Contact Angle
COP=United Kingdom
Delivery_Pre-order
dielectric material polishing
Electrokinetic Behavior
eq_isMigrated=2
eq_nobargain
Film Thickness Variation
Higher Removal Rate
Language_English
NAND Flash Memory
Nano Fumed Silica Particle
nanoscale device fabrication
Nitride Film
Oxide Film
PA=Temporarily unavailable
PAA Chain
PAA Concentration
PAA Layer
PAA Solution
Pattern Density
pH Iep
Polishing Rate
Poly Si
Poly Si Film
polymeric slurry additives
Pram
Price_€50 to €100
PS=Active
PVP
PVP Polymer
Removal Depth
Removal Rate
semiconductor process engineering
softlaunch
surface roughness analysis

Product details

  • ISBN 9780367446062
  • Weight: 449g
  • Dimensions: 156 x 234mm
  • Publication Date: 30 Jun 2020
  • Publisher: Taylor & Francis Ltd
  • Publication City/Country: GB
  • Product Form: Paperback
  • Language: English
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In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.

Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.

Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.

Hanyang University, Seoul, South Korea

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