Noise Research in Semiconductor Physics
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advanced semiconductor materials
Avalanche Diodes
Avalanche Photodiodes
Capture Cross Section
Carrier Diffusion
carrier lifetime measurement
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Current Noise
defect states analysis
DX Center
electronic transport theory
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Fluctuation Phenomena
Forward Current
Forward Voltage Bias
GaAs Diodes
High Frequency Step
High Resistance Regions
Impact Ionization
Impact Ionization Coefficients
Landau Level
Langevin Equations
Langevin Method
Low Frequency Plateau
Momentum Method
noise characterisation in electronic materials
noise spectroscopy
Noise Spectrum
photoconductivity
photoluminescence
Photoresponse Spectrum
quantum transport phenomena
Recombination Centers
Residual Conductivity
semiconductor physics
Slow Traps
solid state devices
Surface Recombination Velocity
Product details
- ISBN 9789056990060
- Weight: 950g
- Dimensions: 174 x 246mm
- Publication Date: 19 Mar 1997
- Publisher: Taylor & Francis Ltd
- Publication City/Country: GB
- Product Form: Hardback
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This book demonstrates the role and abilities of fluctuation in semiconductor physics, and shows what kinds of physical information are involved in the noise characteristics of semiconductor materials and devices, how this information may be decoded and which advantages are inherent to the noise methods.
The text provides a comprehensive account of current results, addressing problems which have not previously been covered in Western literature, including the excess noise of tunnel-recombination currents and photocurrents in diodes, fluctuation phenomena in a real photoconductor with different recombination centers, and methods of noise spectroscopy of levels in a wide range of materials and devices.
N Lukyanchikova (Edited by) , B Jones (Edited by)
