Terrestrial Neutron-induced Soft Error In Advanced Memory Devices
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€135.99
A01=Eishi Ibe
A01=Hideaki Kameyama
A01=Mamoru Baba
A01=Takashi Nakamura
A01=Yasuo Yahagi
Accelerator Test
Author_Eishi Ibe
Author_Hideaki Kameyama
Author_Mamoru Baba
Author_Takashi Nakamura
Author_Yasuo Yahagi
Category=UKS
Cosmic-Ray Neutron
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eq_computing
eq_isMigrated=1
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Field Test
Monte Carlo Simulation
Neutron Dosimetry
Reliability
Single-Event Upset (SEU)
Soft-Error Mechanism
Product details
- ISBN 9789812778819
- Publication Date: 03 Apr 2008
- Publisher: World Scientific Publishing Co Pte Ltd
- Publication City/Country: SG
- Product Form: Hardback
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Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
