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A01=Ban P. Wong
A01=Paul S. Lazar
A01=Yong-Bin Kim
Age Group_Uncategorized
Age Group_Uncategorized
Author_Ban P. Wong
Author_Paul S. Lazar
Author_Yong-Bin Kim
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Category1=Non-Fiction
Category=TJFC
COP=United Kingdom
Delivery_Delivery within 10-20 working days
Language_English
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Price_€50 to €100
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Nanometer SRAM and DRAM Circuit Design

English

By (author): Ban P. Wong Paul S. Lazar Yong-Bin Kim

Low power consumption is moving higher up on the priority list of system requirements resulting in low power memory architectures and circuit implementations. Circuits need to operate reliably at low voltages (below 1.0V) yet meet their performance targets. The larger spread of process variations as the technology node shrinks makes worst case design impractical. These design challenges impact also the peripheral, control, ancillary and i/o circuits of the SRAM and DRAM. The goal of this book is to describe circuits and circuit design methodologies which overcome these challenges. Examples of scripts, which are used to steer the CAD tools, used in the analysis of the circuits and to gather and present the results of such analysis, are provided. Since a variety of the emerging technologies such as CNT (Carbon Nano Tube) and FinFET are being developed and researched, a new design method for memory cell will also be discussed based on those emerging technologies. See more
Current price €89.29
Original price €93.99
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A01=Ban P. WongA01=Paul S. LazarA01=Yong-Bin KimAge Group_UncategorizedAuthor_Ban P. WongAuthor_Paul S. LazarAuthor_Yong-Bin Kimautomatic-updateCategory1=Non-FictionCategory=TJFCCOP=United KingdomDelivery_Delivery within 10-20 working daysLanguage_EnglishPA=Not available (reason unspecified)Price_€50 to €100PS=Activesoftlaunch
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Product Details
  • Dimensions: 150 x 250mm
  • Publication Date: 25 Mar 2015
  • Publisher: John Wiley and Sons Ltd
  • Publication City/Country: United Kingdom
  • Language: English
  • ISBN13: 9780470568323

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