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A01=Chao-Kun Hu
A01=Martin Gall
A01=Paul S. Ho
A01=Valeriy Sukharev
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Age Group_Uncategorized
Author_Chao-Kun Hu
Author_Martin Gall
Author_Paul S. Ho
Author_Valeriy Sukharev
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Category1=Non-Fiction
Category=PD
Category=PHK
Category=TBN
Category=TGM
Category=THR
Category=TJFD
COP=United Kingdom
Delivery_Delivery within 10-20 working days
Language_English
PA=In stock
Price_€50 to €100
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Electromigration in Metals: Fundamentals to Nano-Interconnects

★★★★★
★★★★★

English

By (author): Chao-Kun Hu Martin Gall Paul S. Ho Valeriy Sukharev

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers. See more
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A01=Chao-Kun HuA01=Martin GallA01=Paul S. HoA01=Valeriy SukharevAge Group_UncategorizedAuthor_Chao-Kun HuAuthor_Martin GallAuthor_Paul S. HoAuthor_Valeriy Sukharevautomatic-updateCategory1=Non-FictionCategory=PDCategory=PHKCategory=TBNCategory=TGMCategory=THRCategory=TJFDCOP=United KingdomDelivery_Delivery within 10-20 working daysLanguage_EnglishPA=In stockPrice_€50 to €100PS=Activesoftlaunch
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Product Details
  • Weight: 980g
  • Dimensions: 174 x 250mm
  • Publication Date: 12 May 2022
  • Publisher: Cambridge University Press
  • Publication City/Country: United Kingdom
  • Language: English
  • ISBN13: 9781107032385

About Chao-Kun HuMartin GallPaul S. HoValeriy Sukharev

Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society IEEE IITC and Semiconductor Industry Association among others. Chao-Kun Hu has recently retired as a Research Staff Member in the Reliability Department at the T.J. Watson Research Center of IBM. He received IBM Corporate awards IEEE Cledo Brunetti award EDS Recognition and IITC Best Paper awards and Invention of the Year NY Intellectual Property Law Association. Martin Gall is the director of the U.S. Operations Reliability Engineering Department at GLOBALFOUNDRIES Inc. He is an IEEE TDMR editor and the recipient of an IEEE IITC Best Paper and SRC Mentor of the Year Award. Valeriy Sukharev is principal engineer for Calibre Design Solutions Siemens EDA Siemens Digital Industries Software. He was a recipient of the 2014 and 2018 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best Paper awards from ICCAD 2016 2019 and 2020.

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