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A01=Chi-Feng Pai
A01=Denny D. Tang
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Author_Chi-Feng Pai
Author_Denny D. Tang
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Category1=Non-Fiction
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Magnetic Memory Technology: Spin-transfer-Torque MRAM and Beyond

English

By (author): Chi-Feng Pai Denny D. Tang

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE

Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications.

This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization.

Among other topics, readers will benefit from the book's discussions of:

  • An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts
  • An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization
  • A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model
  • Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect
  • Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others

Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

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Current price €119.69
Original price €125.99
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A01=Chi-Feng PaiA01=Denny D. TangAge Group_UncategorizedAuthor_Chi-Feng PaiAuthor_Denny D. Tangautomatic-updateCategory1=Non-FictionCategory=PHKCOP=United StatesDelivery_Delivery within 10-20 working daysLanguage_EnglishPA=AvailablePrice_€100 and abovePS=Activesoftlaunch
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Product Details
  • Weight: 454g
  • Dimensions: 10 x 10mm
  • Publication Date: 09 Feb 2021
  • Publisher: John Wiley & Sons Inc
  • Publication City/Country: United States
  • Language: English
  • ISBN13: 9781119562238

About Chi-Feng PaiDenny D. Tang

DENNY D. TANG PHD has been with IBM Watson and later Almaden Research Center TSMC and held a position as MRAM Architect in Western Digital. He Is a Live Fellow of IEEE Fellow of TSMC Academy a co-author of Magnetic Memory Fundamentals and Technology (2010). CHI-FENG PAI PHD is now an Associate Professor of National Taiwan University (NTU). He is the recipient of Young Researcher Award of Asian Union of Magnetic Society (AUMS) Young Researcher Fellowship of Ministry of Science and Technology (MOST Taiwan) and Young Researcher Award of Taiwan Semiconductor Industry Association (TSIA).

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